Chip Economics / Fab explorer

Fab Explorer

Semiconductor fabrication and advanced-packaging facilities: filterable by company, country, tech node and availability, with a capacity outlook and a geographic scatter view. Each field names its own source once an editor has checked it; until then it is marked as a sample.

What this register covers, and what it does not

Facilities register build state: Demonstration. 76 of 76 records are still samples that no editor has checked against public sources; every figure on them is labelled. How build states work

Known gaps (7)

Southeast Asia: no back-end, assembly, test or packaging facility recorded
Europe: no back-end, assembly, test or packaging facility recorded
Middle East: no back-end, assembly, test or packaging facility recorded
Latin America: no facility of any kind recorded
No facility of this kind recorded anywhere: Advanced packaging
No facility of this kind recorded anywhere: Combined front-end and back-end
Operators not yet linked to a directory record: ASE, ASIP Technologies, ASP Semicon, Amkor, CXMT, HCL-Foxconn India Chip, HIT-Cip, Heterogeneous Integration Packaging Solutions, ISMC, Intel Foundry, JCET, Micron, NSTC EUV Accelerator, SK Hynix, Sancode Semi, Silelectric Semiconductor Manufacturing, SwaySure Technology, TSMC, Tata Semiconductor Assembly and Test, Texas Institute for Electronics, UK Semiconductor Institute, UMC, Yongin Semiconductor Cluster

of 76 fabs

frontend

backend

constrained

early access

available

COMPANY

COUNTRY

TECH NODE

AVAILABILITY

Map

This loads a map of CXMT CXMT Hefei from Google, which connects your browser to Google.

Aggregate Capacity Outlook (2024-2028)

Group by

TaiwanUnited StatesSouth KoreaChinaJapanGermanyIndiaIreland

kWSPM (300mm equiv.), sample estimates: each fab's page shows the source and date of its figures once checked.

Aggregate Capacity Outlook (2024-2028)

Group by

TaiwanChinaUnited StatesIndia

k units/month, sample estimates: each fab's page shows the source and date of its figures once checked.

Frontend Wafer Fabs

Company	Fab	Location	Segment	Status	Tech node	Wafer	HVM start	Cap. 2025	Cap. 2026	Availability	Subsidy
CXMT	CXMT Hefei	Hefei, China	—	In Productionnot yet evidenced	17nm DRAM (Memory)	300mm	2019	12	13	Available	—
Nexchip Semiconductor	Hefei fabs (N1 to N3)	Hefei, China	—	In production	55-150nm (Mature (≥40nm))	—	—	—	—	Available	—
Nexchip Semiconductor	Hefei Phase IV fab	Hefei, China	—	Under construction	40nm and 28nm (22 to 28nm class)	300mm	—	—	—	Early access	—
Samsung Electronics	Xi'an memory fab (X1/X2)	Xi'an, China	—	In production	Fifth-generation V-NAND (X2 line) (Memory)	—	—	—	—	Available	—
SMIC	Lingang 12-inch fab (Shanghai)	Shanghai, China	—	Under constructionEvidence may be out of date	28nm and above (22 to 28nm class)	300mm	—	—	—	Early access	—
SMIC	SMIC Shanghai (B Line)	Shanghai, China	—	In Productionnot yet evidenced	14nm (10 to 16nm class)	300mm	2019	35	36	Available	—
SMIC	Tianjin Xiqing 12-inch fab	Tianjin, China	—	AnnouncedEvidence may be out of date	28-180nm (22 to 28nm class)	300mm	—	—	—	Early access	—
SMIC	Shenzhen 12-inch fab	Shenzhen, China	—	Under constructionEvidence may be out of date	28nm and above (22 to 28nm class)	300mm	—	—	—	Early access	—
SwaySure Technology	SwaySure Technology	Shenzhen, China	Memory	Under Constructionnot yet evidenced	DRAM fab (Memory)	—	—	—	—	Early access	—
TSMC	Fab 16 (Nanjing)	Nanjing, China	—	In production	16nm (10 to 16nm class)	300mm	—	—	—	Available	—
YMTC	Wuhan Fab 1	Wuhan, China	—	In productionEvidence may be out of date	128-layer 3D NAND (Memory)	—	—	—	—	Available	—
Bosch	Dresden 300 mm wafer fab	Dresden, Germany	—	In productionEvidence may be out of date	down to 65nm (ASICs, power semiconductors) (Mature (≥40nm))	300mm	—	—	—	Available	—
European Semiconductor Manufacturing Company	European Semiconductor Manufacturing Company	Dresden, Germany	Foundry	Under constructionEvidence may be out of date	28/22nm and 16/12nm (10 to 16nm class)	300mm	2027	—	—	Early access	—
GlobalFoundries	Fab 1 (Dresden)	Dresden, Germany	—	In production	FDX FD-SOI, feature-rich CMOS, Power BCD (technology class, no node size published)	300mm	—	—	—	Available	—
Infineon Technologies	Smart Power Fab (Dresden Module 4)	Dresden, Germany	—	In production	300 mm analog/mixed-signal and power technologies (technology class, no node size published)	300mm	—	—	—	Available	—
Intel	Magdeburg fab (planned)	Magdeburg, Germany	—	Announced, stalledEvidence may be out of date	Angstrom-era technology (< 2nm)	—	—	—	—	Early access	—
ISMC	ISMC Analog Fab	Mysuru, India	Foundry	Stallednot yet evidenced	Analog fab (technology class, no node size published)	—	—	—	—	Early access	—
Tata Electronics	Dholera fab	Dholera, India	—	Under construction	28-110nm (22 to 28nm class)	300mm	—	—	—	Early access	—
Intel	Fab 34	Leixlip, Ireland	—	In productionEvidence may be out of date	Intel 4 (4nm class)	—	—	—	—	Available	—
Intel	Fab 28	Kiryat Gat, Israel	—	In productionEvidence may be out of date	Intel 7 (7nm class)	—	—	—	—	Available	—
Tower Semiconductor	Migdal HaEmek Fab 2 (200mm)	Migdal HaEmek, Israel	—	In production	0.18-0.13um (Mature (≥40nm))	200mm	—	—	—	Available	—
STMicroelectronics	Silicon Carbide Campus (Catania)	Catania, Italy	—	Under constructionEvidence may be out of date	200 mm SiC (technology class, no node size published)	200mm	2026	—	—	Early access	—
Kioxia	Kitakami Fab2 (K2)	Kitakami, Japan	—	In production	218-layer 3D flash (BiCS FLASH 8th generation) (Memory)	—	—	—	—	Available	—
Kioxia	Yokkaichi Fab7 (Y7)	Yokkaichi, Japan	—	In productionEvidence may be out of date	162-layer 3D flash (BiCS FLASH 6th generation) (Memory)	—	—	—	—	Available	—
Micron Technology	Hiroshima fab	Hiroshima, Japan	—	In productionEvidence may be out of date	1-beta DRAM (volume); 1-gamma EUV planned (Memory)	—	—	—	—	Available	—
Rapidus	IIM-1	Chitose, Japan	—	Under construction	2nm GAA (2nm class)	—	2027	—	—	Early access	—
Japan Advanced Semiconductor Manufacturing	JASM Kumamoto (second fab)	Kumamoto, Japan	—	Under construction	3nm (3nm class)	300mm	—	—	—	Early access	—
Japan Advanced Semiconductor Manufacturing	JASM Kumamoto	Kumamoto, Japan	—	In Productionnot yet evidenced	22/28nm and 12/16nm (10 to 16nm class)	300mm	2024	15	15	Available	Japan METI grant
Infineon Technologies	Kulim 3	Kulim, Malaysia	—	In productionEvidence may be out of date	200 mm SiC (with GaN epitaxy) (technology class, no node size published)	200mm	—	—	—	Available	—
GlobalFoundries	Singapore (Woodlands)	Singapore, Singapore	—	In production	Power BCD, RF-SOI, SiGe, silicon photonics, feature-rich CMOS (technology class, no node size published)	300mm	—	—	—	Available	—
Micron Technology	Singapore NAND fab	Singapore, Singapore	—	In production	232-layer NAND (Memory)	—	—	—	—	Available	—
UMC	Fab 12i P3	Singapore, Singapore	—	Under construction	22/28nm (22 to 28nm class)	300mm	2026	—	—	Early access	—
VSMC	VSMC Singapore 300mm fab	Tampines, Singapore	—	Under construction	130-40nm (Mature (≥40nm))	300mm	2027	—	—	Early access	—
Samsung Electronics	Pyeongtaek Line 2	Pyeongtaek, South Korea	—	In production	1z DRAM (EUV); V-NAND; foundry EUV 5nm and below (Memory)	300mm	—	—	—	Available	—
Samsung Electronics	S3 Line	Hwaseong, South Korea	—	In Productionnot yet evidenced	3nm (3nm class)	300mm	2022	30	32	Constrained	—
SK hynix	M16	Icheon, South Korea	—	In Productionnot yet evidenced	1anm DRAM (Memory)	300mm	2021	15	17	Constrained	—
SK hynix	M15X	Cheongju, South Korea	—	Under construction	1b DRAM (for HBM4) (Memory)	—	—	—	—	Early access	—
Yongin Semiconductor Cluster	Yongin Semiconductor Cluster	Yongin, South Korea	Government & National Programs	Under Constructionnot yet evidenced	National cluster (Mature (≥40nm))	—	—	—	—	Early access	—
Nanya Technology	Fab 5A (Taishan)	New Taipei, Taiwan	—	Under construction	10nm-class DRAM (EUV) (Memory)	300mm	2028	—	—	Early access	—
TSMC	Fab 20 (Baoshan)	Hsinchu, Taiwan	—	In production	N2 (2nm class)	300mm	—	—	—	Available	—
TSMC	Fab 18	Tainan, Taiwan	—	In productionEvidence may be out of date	3nm (3nm class)	300mm	2021	100	110	Constrained	—
TSMC	Fab 12 (12A/12B)	Hsinchu, Taiwan	—	In production	28nm (volume); 22nm (R&D) (22 to 28nm class)	300mm	—	—	—	Available	—
TSMC	Fab 14 (14A/14B)	Tainan, Taiwan	—	In production	20nm (Phase 5) (22 to 28nm class)	300mm	—	—	—	Available	—
TSMC	Fab 15 (15A/15B)	Taichung, Taiwan	—	In production	40nm and 28nm (22 to 28nm class)	300mm	—	—	—	Available	—
TSMC	Fab 22 (Kaohsiung)	Kaohsiung, Taiwan	—	In production	N2 (2nm family, A16 in later phases) (2nm class)	300mm	—	—	—	Available	—
UMC	Fab 12A	Tainan, Taiwan	—	In Productionnot yet evidenced	14nm (10 to 16nm class)	300mm	2003	40	40	Available	—
Winbond Electronics	Kaohsiung fab	Kaohsiung, Taiwan	—	In productionEvidence may be out of date	25nm specialty DRAM (Memory)	300mm	—	—	—	Available	—
HIT-Cip	HIT-Cip	Ankara, Turkey	Government & National Programs	Announcednot yet evidenced	National incentive (Mature (≥40nm))	—	—	—	—	Early access	—
UK Semiconductor Institute	UK Semiconductor Institute	United Kingdom	Government & National Programs	Announcednot yet evidenced	National institute (Mature (≥40nm))	—	—	—	—	Early access	—
GlobalFoundries	Fab 8	Malta, NY, United States	—	In Productionnot yet evidenced	12nm (10 to 16nm class)	300mm	2012	25	25	Available	US CHIPS Act
Intel	Fab 52	Chandler, United States	—	In production	Intel 18A (2nm class)	—	—	—	—	Available	—
Intel	Ohio One	New Albany, United States	—	Under Constructionnot yet evidenced	18A (2nm class)	300mm	2030	—	—	Early access	US CHIPS Act
Intel Foundry	Fab 42	Chandler, United States	—	In Productionnot yet evidenced	Intel 18A (modernization planned) (2nm class)	300mm	2020	15	20	Constrained	US CHIPS Act
Micron	Boise ID1 DRAM Fab	Boise, United States	—	Under construction	1beta DRAM (Memory)	300mm	—	10	12	Early access	US CHIPS Act
NSTC EUV Accelerator	NSTC EUV Accelerator	Albany, United States	Research & Institutes	Under Constructionnot yet evidenced	Pilot line (< 2nm)	—	—	—	—	Early access	—
Samsung Electronics	Taylor Fab	Taylor, TX, United States	—	Under Constructionnot yet evidenced	2nm (2nm class)	300mm	2027	—	—	Early access	US CHIPS Act
Samsung Austin Semiconductor	S2 Line (Austin)	Austin, United States	—	In production	65-14nm (10 to 16nm class)	300mm	—	—	—	Available	—
Texas Instruments	SM1 (Sherman)	Sherman, United States	—	In production	300 mm analog and embedded processing (technology class, no node size published)	300mm	—	—	—	Available	—
Texas Instruments	LFAB1 (Lehi)	Lehi, United States	—	In productionEvidence may be out of date	65nm and 45nm (Mature (≥40nm))	300mm	—	—	—	Available	—
TSMC Arizona	Arizona Fab (Phase 3)	Phoenix, United States	—	Under construction	N2 and A16 (2nm class)	—	—	—	—	Early access	—
TSMC Arizona	Arizona Fab (Phase 1)	Phoenix, United States	—	In production	4nm (4nm class)	300mm	2024	20	22	Constrained	US CHIPS Act
TSMC Arizona	Arizona Fab (Phase 2)	Phoenix, United States	—	Under Constructionnot yet evidenced	3nm (3nm class)	300mm	2027	—	—	Early access	US CHIPS Act
Wolfspeed	Mohawk Valley Fab	Marcy, United States	—	In productionEvidence may be out of date	200 mm SiC (technology class, no node size published)	200mm	—	—	—	Available	—

Backend & Advanced Packaging Facilities

Company	Facility	Location	Segment	Status	Packaging tech	HVM start	Cap. 2025	Cap. 2026	Availability	Subsidy
JCET	Jiangyin Fab	Jiangyin, China	—	In Productionnot yet evidenced	FcBGA, WLCSP	2005	145	150	Available	—
ASIP Technologies	ASIP Technologies	Visakhapatnam, India	OSAT	Under Constructionnot yet evidenced	—	—	—	—	Early access	—
ASP Semicon	ASP Semicon	Bhubaneswar, India	OSAT	Announcednot yet evidenced	—	—	—	—	Early access	—
HCL-Foxconn India Chip	HCL-Foxconn India Chip	Jewar, India	OSAT	Under Constructionnot yet evidenced	—	—	—	—	Early access	—
Heterogeneous Integration Packaging Solutions	Heterogeneous Integration Packaging Solutions	Bhubaneswar, India	OSAT	Under Constructionnot yet evidenced	—	2028	—	—	Early access	—
Sancode Semi	Sancode Semi	Bhubaneswar, India	OSAT	Announcednot yet evidenced	—	—	—	—	Early access	—
Silelectric Semiconductor Manufacturing	Silelectric Semiconductor Manufacturing	Bhubaneswar, India	OSAT	Under Constructionnot yet evidenced	—	—	—	—	Early access	—
Tata Semiconductor Assembly and Test	Tata Semiconductor Assembly and Test	Jagiroad, India	OSAT	Under Constructionnot yet evidenced	—	—	—	—	Early access	—
ASE	Kaohsiung (K12/K21)	Kaohsiung, Taiwan	—	In Productionnot yet evidenced	CoWoS-S, FcBGA, FoCoS	2010	195	205	Available	—
TSMC	Advanced Packaging (AP3/AP5/AP6)	Chiayi / Tainan, Taiwan	—	In Productionnot yet evidenced	CoWoS-L, CoWoS-S	2017	130	170	Fully booked	—
Amkor	Peoria Fab	Peoria, AZ, United States	—	Under Constructionnot yet evidenced	2.5D, FcBGA, SiP	2028	—	—	Early access	US CHIPS Act
SK hynix	Indiana HBM Packaging Facility	West Lafayette, United States	—	Under Constructionnot yet evidenced	—	2029	—	—	Early access	US CHIPS Act
Texas Institute for Electronics	Texas Institute for Electronics	Austin, United States	Research & Institutes	Under Constructionnot yet evidenced	—	—	—	—	Early access	—

AI Accelerator Supply Chain Profiles

Estimated cost structure for accelerators in the accelerator directory covers die size, packaging, manufacturing cost by layer (logic die, memory, packaging and test) and estimated margin against an indicative market price. Each layer names the cost method note behind it once curated; until then the figures are sample estimates, work in progress.

Estimated manufacturing cost per chip by layer, with indicative market price and estimated margin, US dollars, highest cost first
Chip	Node	Die size (mm²)	Die count	Packaging	Logic die	Memory	Packaging	Test	Est. COGS	Market price	Est. margin
Cerebras WSE-3 (wafer-scale)Sample	TSMC 5nm	46,225	1	OTHER	US$35,000	Not estimated	US$9,000	US$4,000	US$48,000Sample estimate, work in progress	US$2,000,000Indicative sample	98%
NVIDIA GB200 (per GPU)Sample	TSMC 4NP	1,600	2	COWOS-L	US$2,700	US$2,950	US$820

Availability bands

A coarse band drawn from public reports. It is not a lead time, a quote or a commitment by the operator.

Available: Public reports indicate the facility is taking new work on its current processes.
Constrained: Public reports indicate new work is taken with allocation or longer queues.
Severely constrained: Public reports indicate new work is taken only on allocation and in small volumes.
Fully booked: Public reports indicate no capacity is open to new customers in the current planning period.
Early access: Not yet in volume production; access is limited to early customers or partners.