onsemi introduces EliteSiC M4 fourth-gen silicon carbide platform, with up to 30% higher power density and 35% lower losses

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has introduced EliteSiC M4, its fourth-generation silicon carbide (SiC) platform built on a trench architecture and designed to set a new performance benchmark for next-generation power systems. With what is claimed to be industry-leading conduction and switching performance, EliteSiC M4 allows greater design freedom to increase power density and efficiency up to 30% and lower losses by 35%, enabling more efficient, pow…

Source: Semiconductor Today, published 2026-11-10. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern