News / Equipment & Materials / Etch-Free GaN: Hydrogen Plasma Passivation for HEMTs, Monolithic ICs, and Schottky Diodes

Etch-Free GaN: Hydrogen Plasma Passivation for HEMTs, Monolithic ICs, and Schottky Diodes

By The Semiconductor Hub news desk · 2026-11-10

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Hydrogen plasma passivates p-GaN without etching, improving HEMT stability, monolithic e/d-mode integration, and Schottky diode breakdown. The post Etch-Free GaN: Hydrogen Plasma Passivation for HEMTs, Monolithic ICs, and Schottky Diodes appeared first on Power Electronics News.

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Source: Power Electronics News, published 2026-11-10. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern

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