Mitsubishi Electric suppresses frequency dispersion in GaN transistors using GaN substrates

Tokyo-based Mitsubishi Electric Corp claims that, for the first time in the world, it has elucidated the effects of frequency dispersion (whereby current values and other characteristics of high-frequency devices vary depending on the operating frequency) caused by crystal defects in a gallium nitride (GaN) transistor (fabricated from a single-crystal GaN epitaxial layer on a single-crystal GaN substrate) and demonstrated that frequency dispersion can be significantly suppressed...

Source: Semiconductor Today, published 2026-11-10. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern