Nexperia adds ultra-low-resistance GaN FETs for next-gen power density and efficiency

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has launched new ultra-low-ohmic gallium nitride (GaN) FETs, expanding its low- and medium-voltage GaN portfolio with devices spanning 18V to 200V. Designed to address power design challenges in AI data centres, humanoid robotics, battery-powered tools, renewable energy, high-efficiency SR and DC–DC conversion, the new devices combi…

Source: Semiconductor Today, published 2026-11-10. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern