News / Equipment & Materials / A high-performance depletion mode graded AlGaN/GaN HEMT with trilayer cap and AlInGaN back barrier for analog and RF applications
A high-performance depletion mode graded AlGaN/GaN HEMT with trilayer cap and AlInGaN back barrier for analog and RF applications
By The Semiconductor Hub news desk ·
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In this paper, a high-performance, depletion-mode GaN based High-Electron-Mobility Transistor (HEMT) is designed and investigated for analog and radio-frequency applications. In the proposed device, we have introduced a trilayer cap and a passivation-embedded T-shaped partially recessed gate with a graded AlGaN barrier including Al0.30Ga0.70N, Al0.25Ga0.75N, and Al0.20Ga0.80N layers. In addition, an AlInGaN back barrier has been incorporated to enhance the analog and RF performance of the devic…
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