News / Equipment & Materials / High-performance GaN HEMTs on an ultrathin 4H-SiC/diamond engineered substrate via optimized epitaxial growth
High-performance GaN HEMTs on an ultrathin 4H-SiC/diamond engineered substrate via optimized epitaxial growth
By The Semiconductor Hub news desk ·
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GaN high-electron-mobility transistors were fabricated on an ultrathin 4H-SiC/diamond engineered substrate using an optimized epitaxial growth scheme. Optimization of the epitaxial growth conditions improved epitaxial quality and carrier transport properties. The fabricated devices exhibited a maximum DC drain current density of approximately 1.25 A mm−1 and a peak transconductance of 367 mS mm−1, demonstrating high current capability on the engineered substrate platform. Infrared thermography …
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