Component · Power & Discretes
SiC Schottky diode
A silicon carbide majority-carrier rectifier rated at 600 V and above, with virtually no reverse recovery charge and a recovery current that is almost temperature independent.
Most commercial parts are merged pin-Schottky structures for surge robustness.
- Also known as
- SiC SBD, MPS diode
- Type
- Component
- Domain
- Power & Discretes, Wide bandgap
Notes
The first commercial SiC product, launched by Infineon in 2001, and still the volume entry point for SiC in PFC stages.
Related terms
Part of the Power & Discretes glossary, with every term in the topic and the lifecycles, tools and standards that use them.
Where it appears on the Hub
No other page of the Hub uses this term yet.
Suggest an improvement
Suggest an improvement to this entry
A clearer definition, an example, a correction or a source an editor can check. Editors review every suggestion before the entry changes.
Last reviewed: not yet reviewed in depth. Entry last updated . The full glossary