Component · Power & Discretes
Body diode
The parasitic pn diode formed between the source-body region and the drain of a vertical power MOSFET. It conducts whenever the device is reverse biased, which is useful for freewheeling but introduces reverse recovery charge.
- Also known as
- Intrinsic diode
- Type
- Component
- Domain
- Power & Discretes, Power devices
Notes
SiC MOSFET body diodes have a high forward drop near 3 V, so short dead times and synchronous conduction matter more than in silicon.
Related terms
- Qrr
- Freewheeling diode
- Dead time
- Synchronous rectification
- GaN HEMT
Part of the Power & Discretes glossary, with every term in the topic and the lifecycles, tools and standards that use them.
Where it appears on the Hub
Used on 2 pages of the Hub. In each group, the pages that mention it most come first.
Suggest an improvement
Suggest an improvement to this entry
A clearer definition, an example, a correction or a source an editor can check. Editors review every suggestion before the entry changes.
Last reviewed: not yet reviewed in depth. Entry last updated . The full glossary