Reliable HCI-based programming in V-NAND flash memory: co-optimization of SWL waveform and trap-cut architecture

Hot carrier injection-based programming has emerged as a high-efficiency alternative to conventional Fowler–Nordheim (FN) tunneling for next-generation vertical NAND (V-NAND), yet its practical implementation is severely constrained by coupled physical reliability trade-offs: program disturb, Z-interference, and retention degradation. This study investigates these bottlenecks through technology computer-aided design simulations calibrated to experimental PN junction and V-NAND reference data, a…

Source: Semiconductor Science and Technology (IOP), published 2026-10-26. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern