Nexperia expands SiC portfolio with 750V trench MOSFETs for high-efficiency power conversion

Discrete device designer and manufacturer Nexperia B.V. of Nijmegen, the Netherlands (which operates wafer fabs in Hamburg, Germany, and Hazel Grove Manchester, UK) has launched a new family of 750V silicon carbide (SiC) trench MOSFETs, combining low switching losses, temperature-stable RDS(on) characteristics and robust switching performance in a broad range of package options, including the introduction of TOLL packaging to Nexperia’s SiC MOSFET portfolio. Designed for demanding industrial an…

Source: Semiconductor Today, published 2026-11-11. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern