News / Equipment & Materials / Nexperia Adds GaN and SiC Devices for High-Efficiency Power Conversion
Nexperia Adds GaN and SiC Devices for High-Efficiency Power Conversion
By The Semiconductor Hub news desk ·
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The new GaN FETs and 750 V SiC MOSFETs extend Nexperia's power portfolio for AI, EV charging, renewable energy and industrial systems. The post Nexperia Adds GaN and SiC Devices for High-Efficiency Power Conversion appeared first on Power Electronics News.
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