1968
Robert Dennard is granted the patent for the single-transistor DRAM cell
IBM's Robert Dennard is granted US Patent 3,387,286 for a memory cell built from a single transistor and a capacitor — far simpler than the six-transistor SRAM cells of the day. The one-transistor DRAM cell it describes becomes, with steady scaling, the basis of essentially all mainstream computer memory.
Source: Wikipedia — Robert Dennard
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