Technology · Process Technology
SiGe BiCMOS (Silicon Germanium Bipolar CMOS)
A BiCMOS process whose bipolar devices are silicon-germanium heterojunction bipolar transistors, offering very high cutoff frequency and low noise. It is the workhorse for millimetre wave, optical driver and high-speed radio front ends.
- Also known as
- SiGe, SiGe HBT process
- Type
- Technology
- Domain
- Process Technology, Specialty processes
Notes
SiGe HBTs remain competitive with III-V devices up to and beyond 100 GHz at far lower cost.
Related terms
Part of the Process Technology glossary, with every term in the topic and the lifecycles, tools and standards that use them.
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