Acronym · Process Technology
GIDL (Gate-Induced Drain Leakage)
Leakage generated in the gate-to-drain overlap region when a strong field there causes band-to-band tunnelling. It matters most in low-power and memory devices held in deep standby with negative gate bias.
- Type
- Acronym
- Domain
- Process Technology, Device physics
Notes
GIDL is a known limiter of DRAM retention time and of ultra-low-power standby modes.
Related terms
- Leakage current
- DRAM
- Gate oxide
- Junction leakage
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