Term · Power & Discretes
E-mode GaN (Enhancement-Mode Gallium Nitride)
A GaN HEMT engineered to be normally off, so it blocks at zero gate bias and needs a positive gate voltage to conduct. Most commercial parts achieve this with a p-doped GaN gate that depletes the channel underneath.
- Also known as
- Normally-off GaN, eGaN FET
- Type
- Term
- Domain
- Power & Discretes, Wide bandgap
Notes
Its gate tolerates only about 6 V, so e-mode GaN needs a tightly regulated driver rather than a generic 12 V MOSFET driver.
Related terms
- p-GaN gate
- D-mode
- Cascode GaN
- Gate driver
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