This thread is for discussing the lifecycle document "Process Reliability Qualification: stage guide".
How the intrinsic reliability of a node's devices and interconnect is proven on qualification vehicles built on the frozen baseline. It covers gate dielectric breakdown, transistor ageing, interconnect wear-out, ESD and latch-up, failure analysis and the technology qualification report. It is written for reliability, failure analysis and process integration engineers and for the quality and customer teams who rely on the result.
Read the document: https://www.thesemiconhub.com/lifecycle/process-node/process-node-reliability/document
Point out anything that is wrong, unclear or missing, and say which section you mean. Reviewers read this thread when they audit the document.