TCAD Engineer

Project

Work done for a product or program.

• Build calibrated process simulation decks for implant, diffusion, oxidation, etch and deposition steps against silicon SIMS and TEM data.
• Construct 3D device structures and run drift-diffusion, hydrodynamic and quantum-corrected device simulations for Id-Vg, Id-Vd and CV characteristics.
• Calibrate mobility, trap, tunnelling and quantum models to measured hardware so predictions are silicon-anchored.
• Run virtual DOEs to screen process options and identify dominant sensitivities before split lots are built.
• Simulate variability using statistical TCAD, including random dopant fluctuation and metal gate work-function variation.
• Support device architecture exploration for GAA nanosheet, forksheet, CFET, backside power and 3D memory structures.
• Extract parasitics and generate compact-model starting points to accelerate SPICE model development.
• Model reliability physics such as hot-carrier degradation, self-heating and bias temperature instability.
• Document and present simulation insight that shapes integration and device decisions.

Function

Work that keeps the discipline running: methods, tools, suppliers and people.

• Automate simulation workflows and mesh generation to scale from single-device runs to large sensitivity studies.

Project

1. Produce and hand over the role's key deliverables
   • Calibrated process and device simulation decks
   • Virtual DOE sensitivity studies and screening reports
   • Statistical variability simulation results
   • Device architecture exploration assessments
   • Simulation-to-silicon calibration documentation
2. Run research projectsGeneral
   • Define hypotheses and experiments
   • Build test structures or models
   • Analyse and report the results
3. Transfer resultsGeneral
   • Hand findings over to development
   • Support early adoption

Function

1. Stay currentGeneral
   • Review the literature
   • Work with universities and consortia
2. Protect and shareGeneral
   • File invention disclosures
   • Publish where allowed