Infineon to put €1.1bn into GaN fab

Infineon intends to build the first high-volume 300mm GaN fab by investing around €1.1 billion in its llVillach site by 2034. The EU is contributing €319 million towards the cost. […] The post Infineon to put €1.1bn into GaN fab appeared first on Electronics Weekly.

Source: Electronics Weekly, published 2026-10-28. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern