Infineon presents first functional power devices on 300mm SiC wafers

Infineon Technologies AG of Munich, Germany has processed 300mm silicon carbide (SiC) wafers into functional power devices at its fab in Villach, Austria, becoming the first company to pioneer this innovation in a full-scale semiconductor fab environment. The milestone was realized by utilizing existing silicon manufacturing equipment...

Source: Semiconductor Today, published 2026-11-09. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern