News / Equipment & Materials / Infineon first to fab SiC on 300mm wafers

Infineon first to fab SiC on 300mm wafers

By The Semiconductor Hub news desk · 2026-11-10

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Infineon first to fab SiC on 300mm wafers — Image: Electronics Weekly (opens in a new tab)

Infineon is processing 300mm SiC wafers into functional power devices at its fab in Villach, Austria. Infineon used existing silicon (Si) manufacturing equipment. The larger wafer diameter offers 2.3 times […] The post Infineon first to fab SiC on 300mm wafers appeared first on Electronics Weekly.

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Source: Electronics Weekly, published 2026-11-10. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern

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