Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe

Infineon Technologies AG of Munich, Germany is establishing the world’s first high-volume manufacturing facility for gallium nitride (GaN) power semiconductors on 300mm wafers in Europe. As part of the project, the firm will invest about €1.1bn in its existing cleanroom facilities at the site in Villach, Austria by 2034. Leveraging both the existing and upgraded infrastructure will enable efficient and cost-effective expansion of manufacturing capacity, it is reckoned. Production is scheduled t…

Source: Semiconductor Today, published 2026-10-27. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern