Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors.” The first author, Geun Hyeong Park, Ph.D., summarizes the work here: “Fast, frequently rewritten memory requires low operating voltages, rapid switching, and high cycling endurance. In ferroelectric capacitors, however, accelerating polarization switching often requires higher voltages that... » read more The post Fa…

Source: Semiconductor Engineering, published 2026-11-03. The summary is the Hub's own; the full story is at the source. Report a rights or accuracy concern