News / Equipment & Materials / Electrothermal parameter identification from DC I-V data for compact drain-current models of GaN-on-SiC RF HEMTs: a comparative metaheuristic study
Electrothermal parameter identification from DC I-V data for compact drain-current models of GaN-on-SiC RF HEMTs: a comparative metaheuristic study
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Accurate electrothermal parameter extraction is essential for compact modeling of gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) used in radio-frequency (RF) and high-power circuits. This study compares four published compact drain-current formulations: the Fager–Pedro LDMOS model, the Yang model, the Curtice cubic model, and the Cao enhanced EEHEMT model. We fitted each formulation to room-temperature, on-wafer direct-current (DC) current–voltage (I–…
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