Effect of intrinsic layer thickness on the power conversion efficiency of GaN p-i-n betavoltaic cells

The effect of unintentionally doped GaN (UID-GaN) layer thickness on depletion characteristics and power conversion efficiency (PCE) in GaN p-i-n betavoltaic cells was investigated by fabricating devices with UID-GaN layer thicknesses of 0.3 µm and 2 µm. The penetration and energy-deposition profiles of 17 keV electrons in GaN, representing the mean energy of the Ni-63 beta spectrum, were analyzed by Monte Carlo simulation to determine an appropriate UID-GaN layer thickness range, and the devic…

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