The measured baseline of substrate and epitaxy defects, such as micropipes, basal plane dislocations, stacking faults, pits and particles, by type, density and location, and their link to device yield.
Record or register Work product in the Power and compound semiconductor lifecycle
In wide bandgap materials, crystal defects limit yield and can cause bipolar degradation or early failure. A baseline lets the device team judge feasible die size, lets the process separate material from process yield loss and allows supplier or wafer size changes to be compared fairly.
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