An early assessment, from test chip data, of the intrinsic reliability of the memory cell and process: retention, endurance, dielectric and interconnect wear-out.
Analysis Work product in the Memory product lifecycle (DRAM, NAND and HBM)
Intrinsic wear-out limits are set by the cell and the process and are very expensive to fix once product silicon exists. Assessing them on test chips early shows whether the technology can meet its lifetime targets. Without it, reliability problems surface during component qualification, when fixing them needs process changes, new lots and requalification.
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