Acronym · Photonics, MEMS & Sensors
TMR (Tunnel Magnetoresistance)
A magnetic sensing effect in which the resistance of a magnetic tunnel junction changes sharply with the relative magnetisation of its two ferromagnetic layers.
It offers the highest sensitivity and lowest power of the magnetoresistive family.
- Also known as
- TMR sensor, MTJ sensor
- Type
- Acronym
- Domain
- Photonics, MEMS & Sensors, Sensors
Notes
The same magnetic tunnel junction stack underpins MRAM, so sensor and memory roadmaps share process technology.
Related terms
Part of the Photonics, MEMS & Sensors glossary, with every term in the topic and the lifecycles, tools and standards that use them.
Where it appears on the Hub
Used on 1 page of the Hub. In each group, the pages that mention it most come first.
Suggest an improvement
Suggest an improvement to this entry
A clearer definition, an example, a correction or a source an editor can check. Editors review every suggestion before the entry changes.
Last reviewed: not yet reviewed in depth. Entry last updated . The full glossary