Acronym · Reliability & Quality
PBTI (Positive Bias Temperature Instability)
The NMOS counterpart of NBTI, in which positive gate bias at temperature traps charge in the gate dielectric and raises the threshold voltage. It was negligible with silicon dioxide gates but became significant with hafnium based high-k stacks.
- Type
- Acronym
- Domain
- Reliability & Quality, Failure mechanisms
Notes
Its emergence at the 45 nm high-k metal gate transition forced aging models to cover both device polarities.
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