Metric · Power & Discretes
di/dt
The rate of change of current during a switching transition, in amperes per nanosecond. Acting on stray loop inductance it produces the voltage overshoot that stresses the device, so commutation loop layout governs how fast you may switch.
- Type
- Metric
- Domain
- Power & Discretes, Device parameters
Notes
Wide bandgap devices are usually limited by achievable di/dt in the layout rather than by the silicon itself.
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