This thread is for discussing the lifecycle document "Wafer Size Transition: stage guide".
How a power device or platform moves to a larger substrate diameter, for example from 150 mm to 200 mm silicon carbide, to lower cost per die: the business case, larger substrates and epitaxy, tool conversion, process transfer and the statistical equivalence argument that lets qualification be read across or repeated. It is for transfer, material, process, yield, reliability, quality and supply chain teams.
Read the document: https://www.thesemiconhub.com/lifecycle/power-compound/pwr-wafer-transition/document
Point out anything that is wrong, unclear or missing, and say which section you mean. Reviewers read this thread when they audit the document.