This thread is for discussing the lifecycle document "Silicon Characterisation: stage guide".
How analog or mixed-signal silicon is measured on the bench across supply, temperature and process spread, how results are correlated with simulation and the device models, and how trim and calibration settings are derived. For characterisation and lab engineers, designers, device modelling engineers and the product team preparing customer samples.
Read the document: https://www.thesemiconhub.com/lifecycle/ams/ams-characterisation/document
Point out anything that is wrong, unclear or missing, and say which section you mean. Reviewers read this thread when they audit the document.